High-performance sub-10 nm monolayer Bi2O2Se transistors-Reference-Cited by-同舟云学术

High-performance sub-10 nm monolayer Bi2O2Se transistors

Published:2019 Issue:2 Volume:11 Page:532-540
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Quhe Ruge¹²³⁴^ORCID,Liu Junchen¹²³⁴,Wu Jinxiong⁵⁶⁷⁸⁹,Yang Jie¹⁰⁸⁹⁴,Wang Yangyang¹¹¹²¹³¹⁴⁴^ORCID,Li Qiuhui¹²³⁴^ORCID,Li Tianran⁵⁶⁷⁸⁹,Guo Ying¹⁵¹⁶¹⁷⁴^ORCID,Yang Jinbo¹⁰⁸⁹⁴¹⁸,Peng Hailin⁵⁶⁷⁸⁹,Lei Ming¹²³⁴,Lu Jing¹⁰⁸⁹⁴¹⁸

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications and School of Science

2. Beijing University of Posts and Telecommunications

3. Beijing 100876

4. P. R. China

5. Center for Nanochemistry

6. Beijing National Laboratory for Molecular Sciences (BNLMS)

7. College of Chemistry and Molecular Engineering

8. Peking University

9. Beijing 100871

10. State Key Laboratory for Mesoscopic Physics and Department of Physics

11. Nanophotonics and Optoelectronics Research Center

12. Qian Xuesen Laboratory of Space Technology

13. China Academy of Space Technology

14. Beijing 100094

15. School of Physics and Telecommunication Engineering and Shaanxi Key Laboratory of Catalysis

16. Shaanxi University of Technology

17. Hanzhong 723001

18. Collaborative Innovation Center of Quantum Matter

Abstract

Monolayer Bi₂O₂Se is a promising post-silicon-era semiconductor candidate because of its simultaneous excellent device performance and high ambient stability.

Funder

National Natural Science Foundation of China

State Key Laboratory of Information Photonics and Optical Communications

Education Department of Shaanxi Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR08852G

Reference50 articles.

1. MoS 2 transistors with 1-nanometer gate lengths