High-performance transistors based on monolayer all-inorganic two-dimensional halide perovskite Cs2PbI2Cl2 and its optoelectronic application

Abstract

The two-dimensional (2D) Ruddlesden−Popper phase all-inorganic halide perovskite Cs2PbI2Cl2 has attracted tremendous attention because of its high carrier mobility, strong light-absorbing ability, and excellent environmental stability, possessing enormous potential for use as a high-performance optoelectronic device. Here, we present two transistor devices based on monolayer (ML) Cs2PbI2Cl2 and reveal their performance and current transport mechanisms through ab initio quantum transport calculations. The n-type 10 nm metal-oxide-semiconductor field-effect transistor shows a high on-state current Ion of 3160 μA/μm, and excellent performance regarding subthreshold swing, intrinsic delay time (τ), and power consumption, which completely match the International Roadmap for Device and Systems (2021 version) targets for high-performance devices and low-power devices in 2028. Moreover, phototransistors based on monolayer Cs2PbI2Cl2 also display a strong response to UV light, with a light-to-dark current ratio reaching a maximum of 104. Meanwhile, a high specific detectivity of 2.45 × 1011 Jones is obtained. The results of our study suggest that ML Cs2PbI2Cl2 is a promising candidate for high-performance transistors.