Enhanced average power factor and ZT value in PbSe thermoelectric material with dual interstitial doping

Author:

Xu Liqing12,Wang Xiaoying2,Wang Yang2,Gao Zhibin2ORCID,Ding Xiangdong2,Xiao Yu1ORCID

Affiliation:

1. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China

2. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi’an 710049, China

Abstract

High PFave of 24.18 μW cm−1 K−2 and ZTave of 1.01 at 300–773 K have been achieved in n-type Pb1.02Se–0.2%Cu thermoelectric through dual Pb and Cu interstitial doping, and it exceeds other Se/S-based (Te free) n-type thermoelectric materials.

Funder

National Natural Science Foundation of China

State Key Laboratory of Solidification Processing

Publisher

Royal Society of Chemistry (RSC)

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