Distinct electron and hole transports in SnSe crystals-Reference-Cited by-同舟云学术

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Distinct electron and hole transports in SnSe crystals

Published:2022-06 Issue:11 Volume:67 Page:1105-1107
ISSN:2095-9273
Container-title:Science Bulletin
language:en
Short-container-title:Science Bulletin

Author:

Chang Cheng,Qin Bingchao,Su Lizhong,Zhao Li-Dong

Funder

National Key Research and Development Program of China

Higher Education Discipline Innovation Project

National Science Fund for Distinguished Young Scholars

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference15 articles.

1. Seeking new, highly effective thermoelectrics;Xiao;Science,2020

2. Predicting the potential performance in p-type SnS crystals via utilizing the weighted mobility and quality factor;He;Chin Phys Lett,2020

3. Carriers: the less, the faster;Qin;Mater Lab,2022

4. Realizing high thermoelectric properties in p-type polycrystalline SnSe by inducing DOS distortion;Wang;Rare Met,2021

5. Promising thermoelectric bulk materials with 2D structures;Zhou;Adv Mater,2017

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1. Interstitials in Thermoelectrics;Advanced Materials;2024-07-16

2. Leveraging crystal symmetry for thermoelectric performance optimization in cubic GeSe;Rare Metals;2024-06-08

3. Contrasting strategies of optimizing carrier concentration in bulk InSe for enhanced thermoelectric performance;Rare Metals;2024-06-03

4. DFT combined to Boltzmann transport theory for optoelectronic and thermoelectric properties investigations for Se (4 & 8 (at.%)) doped Li₂SnS₃;Physica Scripta;2024-04-25

5. High Carrier Mobility and Promising Thermoelectric Module Performance of N‐Type PbSe Crystals;Small;2024-04-19

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