Effects of line defects on the electronic properties of ZnO nanoribbons and sheets-Reference-Cited by-同舟云学术

Effects of line defects on the electronic properties of ZnO nanoribbons and sheets

Published:2017 Issue:12 Volume:5 Page:3121-3129
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lu Ning¹²³⁴,Guo Hongyan¹²³⁴,Hu Wei⁵⁶⁷⁸^ORCID,Wu Xiaojun⁹¹⁰¹¹¹²⁴^ORCID,Zeng Xiao Cheng¹³¹⁴¹⁵⁸¹⁶

Affiliation:

1. Department of Physics

2. Anhui Normal University

3. Wuhu

4. China

5. Computational Research Division

6. Lawrence Berkeley National Laboratory

7. Berkeley

8. USA

9. CAS Key Lab of Materials for Energy Conversion

10. Department of Materials Science and Engineering

11. University of Science and Technology of China

12. Hefei

13. Department of Chemistry

14. University of Nebraska-Lincoln

15. Lincoln

16. Collaborative Innovation Center of Chemistry for Energy Materials

Abstract

We perform a comprehensive study of the effects of different types of line defects on the electronic and magnetic properties of ZnO nanoribbons and ZnO monolayer sheets by using first-principles computations.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00367F

Reference67 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. MoS2 Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties

3. Spin Gapless Semiconductor−Metal−Half-Metal Properties in Nitrogen-Doped Zigzag Graphene Nanoribbons

4. Electronic Structure Engineering via On-Plane Chemical Functionalization: A Comparison Study on Two-Dimensional Polysilane and Graphane

5. Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

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