Spin Gapless Semiconductor−Metal−Half-Metal Properties in Nitrogen-Doped Zigzag Graphene Nanoribbons-Reference-Cited by-同舟云学术

Spin Gapless Semiconductor−Metal−Half-Metal Properties in Nitrogen-Doped Zigzag Graphene Nanoribbons

Published:2009-06-25 Issue:7 Volume:3 Page:1952-1958
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Li Yafei¹,Zhou Zhen¹,Shen Panwen¹,Chen Zhongfang²

Affiliation:

1. Institute of New Energy Material Chemistry, College of Chemistry, Institute of Scientific Computing, Nankai University, Tianjin 300071, People’s Republic of China

2. Department of Chemistry, Institute for Functional Nanomaterials, University of Puerto Rico, Rio Piedras Campus, San Juan, Puerto Rico 00931

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn9003428

Reference64 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Graphene-Based Materials

4. Making graphene for macroelectronics

5. Graphene gets ready for the big time

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