Nitrogen-doped zinc oxide nanoribbons for potential resonant tunneling diode applications-Reference-Cited by-同舟云学术

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Nitrogen-doped zinc oxide nanoribbons for potential resonant tunneling diode applications

Published:2023 Issue:25 Volume:25 Page:16889-16895
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Krishna M. Sankush¹,Singh Sangeeta¹^ORCID,Kaushik Brajesh Kumar²^ORCID

Affiliation:

1. Microelectronics & VLSI lab, National Institute of Technology, Patna-800005, India

2. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee 247667, India

Abstract

Armchair ZnONRs doped with nitrogen are investigated in the current manuscript for possible applications based on negative differential resistance (NDR).

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP00440F

Reference47 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. Two-dimensional semiconductors for transistors

3. Synthesis of Graphene and Its Applications: A Review

4. Review on graphene nanoribbon devices for logic applications

5. The role of 2-Dimensional materials for electronic devices

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