Chemical vapor deposition of ruthenium-based layers by a single-source approach-Reference-Cited by-同舟云学术

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Chemical vapor deposition of ruthenium-based layers by a single-source approach

Published:2016 Issue:12 Volume:4 Page:2319-2328
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jeschke Janine¹²³⁴⁵,Möckel Stefan¹²³⁴⁵,Korb Marcus¹²³⁴⁵,Rüffer Tobias¹²³⁴⁵,Assim Khaybar¹²³⁴⁵,Melzer Marcel⁶⁷⁸¹⁹,Herwig Gordon¹²¹⁰¹¹⁵,Georgi Colin⁶⁷⁸¹⁹,Schulz Stefan E.⁶⁷⁸¹⁹,Lang Heinrich¹²³⁴⁵

Affiliation:

1. Technische Universität Chemnitz

2. Faculty of Natural Sciences

3. Institute of Chemistry

4. Inorganic Chemistry

5. 09107 Chemnitz

6. Fraunhofer Institute for Electronic Nano Systems (ENAS)

7. 09126 Chemnitz

8. Germany

9. Center for Microtechnologies

10. Institute of Physics

11. Chemical Physics

Abstract

Single-source precursors Ru(CO)₂(P(n-Bu)₃)₂(O₂CR)₂ allow the successful deposition of Ru(P) layers by the CVD process.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03930D

Reference48 articles.

1. ZERO THICKNESS DIFFUSION BARRIERS AND METALLIZATION LINERS FOR NANOSCALE DEVICE APPLICATIONS

2. Ruthenocenes and Half‐Open Ruthenocenes: Synthesis, Characterization, and Their Use as CVD Precursors for Ruthenium Thin Film Deposition

3. PEALD of a Ruthenium Adhesion Layer for Copper Interconnects

4. Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer

5. Seedless Superfill: Copper Electrodeposition in Trenches with Ruthenium Barriers

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2. Ruthenium(II) MOCVD Precursors for Phosphorus‐Doped Ruthenium Layer Formation;European Journal of Inorganic Chemistry;2020-04-22

3. Iron(III) β-diketonates: CVD precursors for iron oxide film formation;Inorganica Chimica Acta;2019-03

4. β-Ketoiminato-based copper(ii) complexes as CVD precursors for copper and copper oxide layer formation;Dalton Transactions;2018

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