Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics-Reference-Cited by-同舟云学术

Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics

Published:2021 Issue:10 Volume:8 Page:2650-2672
ISSN:2052-1553
Container-title:Inorganic Chemistry Frontiers
language:en
Short-container-title:Inorg. Chem. Front.

Author:

Materano Monica¹²³^ORCID,Lomenzo Patrick D.¹²³^ORCID,Kersch Alfred⁴⁵³^ORCID,Park Min Hyuk⁶⁷⁸⁹^ORCID,Mikolajick Thomas¹⁰¹¹¹²³^ORCID,Schroeder Uwe¹²³^ORCID

Affiliation:

1. NaMLab gGmbH

2. 01187 Dresden

3. Germany

4. Hochschule München

5. 80335 München

6. School of Materials Science and Engineering

7. Pusan National University

8. 46241 Busan

9. Republic of Korea

10. Chair of Nanoelectronics

11. TU Dresden

12. 01062 Dresden

Abstract

A review on ferroelectric phase formation and reliability in HfO₂-based thin films and semiconductor devices.

Funder

Sony

Deutsche Forschungsgemeinschaft

Ministry of Science and ICT, South Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/QI/D1QI00167A

Reference108 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Impact of different dopants on the switching properties of ferroelectric hafniumoxide

3. Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

4. Ferroelectricity in Simple Binary ZrO2 and HfO2

5. Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions

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