Recent advances in long-term stable black phosphorus transistors-Reference-Cited by-同舟云学术

Recent advances in long-term stable black phosphorus transistors

Published:2020 Issue:39 Volume:12 Page:20089-20099
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wan Da¹²³⁴^ORCID,Huang Hao⁵⁶⁷⁴,Wang Zhongzheng⁵⁶⁷⁴,Liu Xingqiang⁸⁹¹⁰¹¹⁴^ORCID,Liao Lei⁵⁶⁷⁴^ORCID

Affiliation:

1. School of Information Science and Engineering

2. Wuhan University of Science and Technology

3. Wuhan

4. China

5. School of Physics and Technology

6. Wuhan University

7. Wuhan 430072

8. Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education

9. School of Physics and Electronics

10. Hunan University

11. Changsha 410082

Abstract

Two-dimensional black phosphorus (BP) presents extensive exciting properties attributed to the high mobility and non-dangling bonds uniform surface with simultaneously obtained atomically ultrathin body.

Funder

Ministry of Science and Technology of the People's Republic of China

China National Funds for Distinguished Young Scientists

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR05204C

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