Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126789
Reference5 articles.
1. Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
2. Ultrahigh resolution of calixarene negative resist in electron beam lithography
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4. Subthreshold design considerations for insulated gate field-effect transistors
5. Calculation of transmission tunneling current across arbitrary potential barriers
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