Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Published:2000-06-19 Issue:25 Volume:76 Page:3810-3812
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kawaura Hisao,Sakamoto Toshitsugu,Baba Toshio

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.126789

Reference5 articles.

1. Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs

2. Ultrahigh resolution of calixarene negative resist in electron beam lithography

3. Ion-implanted complementary MOS transistors in low-voltage circuits

4. Subthreshold design considerations for insulated gate field-effect transistors

5. Calculation of transmission tunneling current across arbitrary potential barriers

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