Regulating energy band alignment for high-performance broadband perovskite photodetectors
Author:
Affiliation:
1. Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
2. College of New Energy, Ningbo University of Technology, Ningbo 315211, China
Abstract
Funder
Natural Science Foundation of Ningbo Municipality
National Natural Science Foundation of China
Ningbo University
Publisher
Royal Society of Chemistry (RSC)
Link
http://pubs.rsc.org/en/content/articlepdf/2024/TA/D4TA01965B
Reference92 articles.
1. Realizing High-Detectivity Near-Infrared Photodetectors in Tin–Lead Perovskites by Double-Sided Surface-Preferred Distribution of Multifunctional Tin Thiocyanate Additive
2. Highly Sensitive Broadband Phototransistors Based on Gradient Tin/Lead Mixed Perovskites
3. Solution-processed semiconductors for next-generation photodetectors
4. A highly sensitive self-powered photodetector based on pinhole-free PEA0.2FA0.8SnI3 films with aminopyrimidine
5. Grain and stoichiometry engineering for ultra-sensitive perovskite X-ray detectors
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