High-k polymer materials containing cyclic carbonate as gate dielectrics for application in low-voltage operating organic thin-film transistors-Reference-Cited by-同舟云学术

High-k polymer materials containing cyclic carbonate as gate dielectrics for application in low-voltage operating organic thin-film transistors

Published:2019 Issue:48 Volume:7 Page:15357-15363
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zou Jiawei¹²³⁴⁵,Li Shizhang⁶⁷⁴⁵,Wang He⁸⁹¹⁰⁴⁵,Wang Wei⁶⁷⁴⁵^ORCID,Shi Zuosen¹²³⁴⁵,Jiang Yuhang¹²³⁴⁵,Cui Zhanchen¹²³⁴⁵^ORCID,Yan Donghang⁸⁹¹⁰⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Supramolecular Structure and Materials

2. College of Chemistry

3. Jilin University

4. Changchun 130012

5. P. R. China

6. State Key Laboratory on Integrated Optoelectronics

7. Jilin University Region

8. State Key Laboratory of Polymer Physics and Chemistry

9. Changchun Institute of Applied Chemistry

10. Chinese Academy of Sciences

Abstract

Low-voltage operating OTFTs have attracted interest as core components for low power applications and electronics. An ideal insulation material as the OTFT gate dielectric layer should possess high-k, good insulation property, mechanical flexibility and inherent nature suitable for growth of organic semiconductors.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC04417E

Reference49 articles.

1. Organic thin-film transistors

2. Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes

3. High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors