Polyimide-based gate dielectrics for high-performance organic thin film transistors-Reference-Cited by-同舟云学术

Polyimide-based gate dielectrics for high-performance organic thin film transistors

Published:2019 Issue:24 Volume:7 Page:7454-7459
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zou Jiawei¹²³⁴⁵,Wang He⁶⁷⁸⁴⁵,Zhang Xuehui⁹¹⁰⁵,Wang Xuesong¹¹¹²⁴⁵,Shi Zuosen¹²³⁴⁵,Jiang Yuhang¹²³⁴⁵,Cui Zhanchen¹²³⁴⁵^ORCID,Yan Donghang⁶⁷⁸⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Supramolecular Structure and Materials

2. College of Chemistry

3. Jilin University

4. Changchun 130012

5. P. R. China

6. State Key Laboratory of Polymer Physics and Chemistry

7. Changchun Institute of Applied Chemistry

8. Chinese Academy of Sciences

9. Tianjin Samsung Motor Co., Ltd

10. Tianjin 300210

11. Department of Chemistry

12. Northeast Normal University

Abstract

In this work, polyimide-based novel polymer dielectric materials, containing a cross-linkable olefin group and a long alkyl chain with biphenyl, were designed and synthesized by a mild chemical synthesis method to avoid thermal imidization so that they can be widely utilized.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02219H

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