Controlled growth of Cu and CuOx thin films from subvalent copper precursors
Author:
Affiliation:
1. Institute of Inorganic Chemistry
2. University of Cologne
3. D-50939 Cologne
4. Germany
Abstract
Volatile mixed-ligand complexes of copper based on stabilizing cyclooctadiene and reactive enaminone are reported as efficient precursors for chemical vapor deposition of Cu(0), Cu2O, or CuO thin films.
Funder
Universität zu Köln
Deutsche Forschungsgemeinschaft
Publisher
Royal Society of Chemistry (RSC)
Subject
Inorganic Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/DT/D0DT02570D
Reference41 articles.
1. Prevention of Copper Interconnection Failure in System on Chip Using Virtual Metrology
2. Corrosion Behavior of Copper Thin Films in Organic HF-Containing Cleaning Solution for Semiconductor Applications
3. Copper Metallization for High Performance Silicon Technology
4. The application of atomic layer deposition for metallization of 65 nm and beyond
5. Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology
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