Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology-Reference-Cited by-同舟云学术

Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology

Published:2020-05 Issue: Volume:701 Page:137967
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Prud'homme Nathalie^ORCID,Constantoudis Vassilios,Turgambaeva Asiya E.,Krisyuk Vladislav V.,Samélor Diane,Senocq François,Vahlas Constantin^ORCID

Funder

CNRS and RFBR

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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5. An investigation on air stability of copper phthalocyanine-based organic thin-film transistors and device encapsulation;Yan;Thin Solid Films,2006

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