Enhanced near-UV electroluminescence from p-GaN/i-Al2O3/n-ZnO heterojunction LEDs by optimizing the insulator thickness and introducing surface plasmons of Ag nanowires
Author:
Affiliation:
1. Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University)
2. Ministry of Education
3. Changchun 130024
4. China
Abstract
Enhanced near-UV electroluminescence is achieved from p-GaN/i-Al2O3/n-ZnO LEDs by optimizing the Al2O3 insulator thickness and introducing Ag nanowire surface plasmons.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00419B
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5. Contents: (Adv. Mater. 8/2010)
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