Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor-Reference-Cited by-同舟云学术

Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor

Published:2010-10-14 Issue:11 Volume:10 Page:4316-4320
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Sohn Jung Inn¹,Choi Su Seok²,Morris Stephen M.²,Bendall James S.¹,Coles Harry J.²,Hong Woong-Ki¹³,Jo Gunho³,Lee Takhee³,Welland Mark E.¹

Affiliation:

1. Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom

2. Centre of Molecular Materials for Photonics and Electronics, Engineering Department, University of Cambridge, 9 J J Thomson Avenue, Cambridge CB3 0FA, United Kingdom

3. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl1013713

Reference30 articles.

1. Silicon down to the wire

2. Limits on Silicon Nanoelectronics for Terascale Integration

3. The missing memristor found

4. Logic Circuits with Carbon Nanotube Transistors

5. Nanowires in Nanoelectronics

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