Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties-Reference-Cited by-同舟云学术

Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties

Published:2020 Issue:42 Volume:12 Page:21857-21868
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

del Giudice F.¹²³⁴,Becker J.¹²³⁴,de Rose C.¹²³⁴,Döblinger M.⁵⁶⁷⁴,Ruhstorfer D.¹²³⁴,Suomenniemi L.¹²³⁴,Treu J.¹²³⁴,Riedl H.¹²³⁴,Finley J. J.¹²³⁴,Koblmüller G.¹²³⁴^ORCID

Affiliation:

1. Walter Schottky Institute and Physics Department

2. Technical University of Munich

3. Garching

4. Germany

5. Department of Chemistry

6. Ludwig-Maximilians-University Munich

7. Munich

Abstract

Ultrathin InAs nanowires with 1D sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR05666A

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