MoS2 oxidative etching caught in the act: formation of single (MoO3)n molecules-Reference-Cited by-同舟云学术

MoS₂ oxidative etching caught in the act: formation of single (MoO₃)_n molecules

Published:2022 Issue:21 Volume:4 Page:4517-4525
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Sovizi Saeed¹^ORCID,Tosoni Sergio²^ORCID,Szoszkiewicz Robert¹^ORCID

Affiliation:

1. Faculty of Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki I Wigury 101, 02-089 Warsaw, Poland

2. Dipartimento di Scienza dei materiali, Università di Milano-Bicocca, via Roberto Cozzi 55, 20125 Milan, Italy

Abstract

We report the presence of sub-nm MoOx clusters formed on basal planes of the 2H MoS2 crystals during thermal oxidative etching in air at a temperature of 370 °C.

Funder

Narodowe Centrum Nauki

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00374K

Reference51 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Local Interactions of Atmospheric Oxygen with MoS2 Crystals

3. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

4. Self‐Deposition of 2D Molybdenum Sulfides on Liquid Metals

5. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

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