Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors-Reference-Cited by-同舟云学术

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

Published:2020 Issue:27 Volume:10 Page:16071-16078
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xu Peipei¹²³⁴,Liang Jiakun¹²³⁴,Li Hong¹²³⁴^ORCID,Liu Fengbin¹²³⁴,Tie Jun¹²³⁴,Jiao Zhiwei¹²³⁴,Luo Jing⁵⁶⁴,Lu Jing⁷⁸⁹⁴¹⁰

Affiliation:

1. College of Mechanical and Material Engineering

2. North China University of Technology

3. Beijing 100144

4. P. R. China

5. Beijing Research Institute of Automation for Machinery Industry

6. Beijing

7. State Key Laboratory of Mesoscopic Physics and Department of Physics

8. Peking University

9. Beijing 100871

10. Collaborative Innovation Center of Quantum Matter

Abstract

The ML GeSe and GeTe NCTFETs fulfill the ITRS low power and high performance devices, respectively, at the “4/3” node range.

Funder

National Natural Science Foundation of China

Beijing Municipal Commission of Education

North China University of Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA02265A

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