Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor-Reference-Cited by-同舟云学术

Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

Published:2016 Issue:26 Volume:52 Page:4828-4831
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Zhang Chaochao¹²³⁴⁵,Shang Jie⁵⁶⁷⁸⁹,Xue Wuhong⁵⁶⁷⁸⁹,Tan Hongwei⁵⁶⁷⁸⁹,Pan Liang⁵⁶⁷⁸⁹,Yang Xi⁵⁶⁷⁸⁹,Guo Shanshan⁵⁶⁷⁸⁹,Hao Jian¹²³⁴,Liu Gang⁵⁶⁷⁸⁹,Li Run-Wei⁵⁶⁷⁸⁹

Affiliation:

1. Department of Chemistry

2. Shanghai University

3. Shanghai

4. P. R. China

5. Key Laboratory of Magnetic Materials and Devices

6. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology

7. Ningbo Institute of Materials Technology and Engineering

8. Chinese Academy of Sciences

9. Ningbo

Abstract

The coexistence and inter-conversion between threshold and memory resistance switching in a ferritin memristor makes it a promising candidate for physiological applications.

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CC/C6CC00989A

Reference36 articles.

1. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

2. Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s

3. Analysis and modeling of resistive switching statistics

4. Memristive devices for computing

5. Nanoionics-based resistive switching memories

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