Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s-Reference-Cited by-同舟云学术

Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s

Published:2014 Issue:78 Volume:50 Page:11496-11499
ISSN:1359-7345
Container-title:Chem. Commun.
language:en
Short-container-title:Chem. Commun.

Author:

Zhang Wenbin¹²³⁴⁵,Wang Cheng⁶⁷⁸,Liu Gang¹²³⁴⁵,Wang Jun⁹¹⁰¹¹,Chen Yu⁶⁷⁸,Li Run-Wei¹²³⁴⁵

Affiliation:

1. Key Laboratory of Magnetic Materials and Devices

2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology

3. Ningbo Institute of Materials Technology and Engineering

4. Chinese Academy of Sciences

5. Ningbo, P. R. China

6. Institute of Applied Chemistry

7. East China University of Science and Technology

8. Shanghai, China

9. Department of Physics

10. Ningbo University

11. Ningbo 315211, China

Abstract

The hyperbranched PAM with isotropic architecture and semi-crystalline nature shows enhanced memory behaviors with more uniform distribution of the HRS and LRS resistances.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CC/C4CC05233A

Reference39 articles.

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2. Polymer electronic memories: Materials, devices and mechanisms

3. Developments in nanocrystal memory

4. Analysis and modeling of resistive switching statistics

5. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

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