Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s

Author:

Zhang Wenbin12345,Wang Cheng678,Liu Gang12345,Wang Jun91011,Chen Yu678,Li Run-Wei12345

Affiliation:

1. Key Laboratory of Magnetic Materials and Devices

2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology

3. Ningbo Institute of Materials Technology and Engineering

4. Chinese Academy of Sciences

5. Ningbo, P. R. China

6. Institute of Applied Chemistry

7. East China University of Science and Technology

8. Shanghai, China

9. Department of Physics

10. Ningbo University

11. Ningbo 315211, China

Abstract

The hyperbranched PAM with isotropic architecture and semi-crystalline nature shows enhanced memory behaviors with more uniform distribution of the HRS and LRS resistances.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Reference39 articles.

1. Emerging research devices. In: International Technology Roadmap for Semiconductors (ITRS) 2005 edn 1–70 (Semiconductor Industry Association, International Sematech, Austin, TX, 2005)

2. Polymer electronic memories: Materials, devices and mechanisms

3. Developments in nanocrystal memory

4. Analysis and modeling of resistive switching statistics

5. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

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