Thermal conductivity of individual Si and SiGe epitaxially integrated NWs by scanning thermal microscopy-Reference-Cited by-同舟云学术

Thermal conductivity of individual Si and SiGe epitaxially integrated NWs by scanning thermal microscopy

Published:2021 Issue:15 Volume:13 Page:7252-7265
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sojo Gordillo Jose Manuel¹²³^ORCID,Gadea Diez Gerard¹²³,Pacios Pujadó Mercè¹²³^ORCID,Salleras Marc⁴⁵⁶³^ORCID,Estrada-Wiese Denise⁴⁵⁶³,Dolcet Marc⁴⁵⁶³^ORCID,Fonseca Luis⁴⁵⁶³,Morata Alex¹²³^ORCID,Tarancón Albert¹²³⁷⁸^ORCID

Affiliation:

1. Catalonia Institute for Energy Research (IREC)

2. Sant Adrià de Besòs

3. Spain

4. Institute of Microelectronics of Barcelona

5. IMB-CNM (CSIC)

6. Bellaterra

7. Catalan Institution for Research and Advanced Studies (ICREA)

8. Barcelona

Abstract

Thermal conductivity measurement of integrated high aspect ratio nanostructures has been demonstrated using spatially-resolved scanning thermal microscopy. Thermal conductivities of integrated individual Si and SiGe nanowires were measured.

Funder

Ministerio de Educación y Cultura

Departament d'Innovació, Universitats i Empresa, Generalitat de Catalunya

Ministerio de Ciencia e Innovación

European Regional Development Fund

Departament d'Empresa i Coneixement, Generalitat de Catalunya

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR00344E