Cross-linking strategies for hole transport/emissive layers in quantum-dot light-emitting diodes-Reference-Cited by-同舟云学术

Cross-linking strategies for hole transport/emissive layers in quantum-dot light-emitting diodes

Published:2023 Issue:23 Volume:7 Page:6130-6140
ISSN:2052-1537
Container-title:Materials Chemistry Frontiers
language:en
Short-container-title:Mater. Chem. Front.

Author:

Yi Yuan-Qiu-Qiang¹²^ORCID,Su Wenming¹^ORCID

Affiliation:

1. Printable Electronics Research Center, Nano-Devices and Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China

2. pi-Conjugated Polymers Unit, Okinawa Institute of Science and Technology, 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan

Abstract

To avoid the interlayer erosion challenge in the IJP process and direct patterning process of the QD emissive layer (EML), cross-linking strategies have been introduced to construct solvent-resistant films (hole transport layers or QD EMLs) upon exposure to heat or light.

Funder

National Key Research and Development Program of China

Natural Science Foundation of Jiangsu Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/QM/D3QM00831B

Reference62 articles.

1. Mini-LED, Micro-LED and OLED displays: present status and future perspectives

2. Technology progress on quantum dot light-emitting diodes for next-generation displays