Quantum Dots Photoresist for Direct Photolithography Patterning

Author:

Gao Zhiyuan1,Shi Jianbing2,Yang Gaoling1ORCID

Affiliation:

1. MIIT Key Laboratory for Low Dimensional Quantum Structure and Devices School of Optics and Photonics Beijing Institute of Technology Beijing 100081 China

2. School of Materials Sciences and Engineering Beijing Institute of Technology Beijing 100081 China

Abstract

AbstractQuantum dots (QDs) have become the most valuable luminescent materials due to their excellent optical properties, such as high color purity, high photoluminescence quantum yield (PLQY), and tunable luminescence spectra. QDs‐based display devices have been used commercially and have shown outstanding advantages such as wide color gamut, high brightness, etc. However, for high‐end displays such as micro‐light‐emitting diodes (Micro‐LED), fine precise patterning of QDs is still a prerequisite and key challenge. Recently, direct photolithography, a method based on photochemical reactions of QDs photoresist (QDPR), has been considered as the most potential patterning technology to achieve high resolution and high‐throughput. This review focuses on the recent progress of QDPR from the point of view of different photochemical reaction mechanisms: starting the monomer polymerization, followed by the ligand crosslinking or decomposition, and eventually introducing crosslinking additives. Furthermore, a comprehensive overview of the current applications of QDPR in displays is provided based on the different types of LED devices. Finally, existing problems in QDs direct photolithography are discussed, along with possible reasons and solutions. This review is expected to accelerate the development of direct photolithography patterning method and provide general guidance for the further design of QDPR for high‐end displays.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

Wiley

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