Ferroelectric polymer-based artificial synapse for neuromorphic computing
Author:
Affiliation:
1. Foundry Division
2. Samsung Electronics Co. Ltd.
3. Youngin 17113
4. Korea
5. Department of Electrical and Computer Engineering
6. Sungkyunkwan University
7. Suwon 16419
Abstract
Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far.
Funder
Ministry of Trade, Industry and Energy
Ministry of Science ICT and Future Planning
Samsung
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NH/D0NH00559B
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