Metal-induced progressive alteration of conducting states in memristors for implementing an efficient analog memory: a DFT-supported experimental approach-Reference-Cited by-同舟云学术

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Metal-induced progressive alteration of conducting states in memristors for implementing an efficient analog memory: a DFT-supported experimental approach

Published:2021 Issue:9 Volume:9 Page:3136-3144
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Das D.¹²³⁴⁵^ORCID,Barman A.¹²³⁴⁵,Sarkar P. K.⁶⁷⁵^ORCID,Rajput P.⁸⁹¹⁰⁵^ORCID,Jha S. N.⁸⁹¹⁰⁵,Hübner R.¹¹¹²¹³^ORCID,Kanjilal D.¹⁴⁵,Johari P.¹²³⁴⁵,Kanjilal A.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics

2. School of Natural Sciences

3. Shiv Nadar University

4. Gautam Buddha Nagar

5. India

6. Department of Applied Science and Humanities

7. Assam University Silchar

8. Beamline Development & Application Section

9. Bhabha Atomic Research Centre

10. Mumbai-400085

11. Helmholtz-Zentrum Dresden-Rossendorf

12. 01328 Dresden

13. Germany

14. Inter-University Accelerator Centre

Abstract

Advancement of the memristor-based artificial synapse (AS) is urgently needed for rapid progress in neuromorphic devices.

Funder

Shiv Nadar University

Bundesministerium für Bildung und Forschung

Science and Engineering Research Board

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC04918B

Reference58 articles.

1. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

2. Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories

3. Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach

4. Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

5. Arbitrary Spike Time Dependent Plasticity (STDP) in Memristor by Analog Waveform Engineering

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1. Density functional theory and molecular dynamics simulations for resistive switching research;Materials Science and Engineering: R: Reports;2024-09

2. Experimental and theoretical evidence of ion engineering in nanocrystalline molybdenum disulfide memristors for non-filamentary switching actions and ultra-low-voltage synaptic features;Journal of Materials Chemistry C;2023

3. Electrochemical-tunable and mesostructure-dependent abrupt-to-progressive conversion in fibroin-based transient memristor;Applied Physics Letters;2022-07-11

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