Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices-Reference-Cited by-同舟云学术

Solution-based in situ deposition of Sb₂S₃ from a single source precursor for resistive random-access memory devices

Published:2023 Issue:18 Volume:4 Page:4119-4128
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Harke Sayali Shrishail¹^ORCID,Zhang Tongjun²,Huang Ruomeng²^ORCID,Gurnani Chitra¹^ORCID

Affiliation:

1. Ecole Centrale School of Engineering, Mahindra University (MU), Hyderabad, India

2. School of Electronics and Computer Science, University of Southampton, Southampton, UK

Abstract

A one-step, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb2S3 on FTO using [Sb{S2P{O(Pr)2}3] precursor. The Ag/Sb2S3/FTO device demonstrated low operating voltage and excellent resistive switching characteristics.

Funder

Migraine Research Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MA/D3MA00205E

Reference64 articles.

1. Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

2. Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

3. Percolation Threshold Enables Optical Resistive‐Memory Switching and Light‐Tuneable Synaptic Learning in Segregated Nanocomposites