Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory-Reference-Cited by-同舟云学术

Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory

Published:2018 Issue:15 Volume:10 Page:7228-7237
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wu Weihua¹²³⁴⁵^ORCID,Zhao Zihan¹²³⁴⁵,Shen Bo¹²³⁴⁵,Zhai Jiwei¹²³⁴⁵,Song Sannian⁶⁷⁸⁹⁵,Song Zhitang⁶⁷⁸⁹⁵

Affiliation:

1. Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials

2. School of Materials Science & Engineering

3. Tongji University

4. Shanghai 201804

5. China

6. State Key Laboratory of Functional Materials for Informatics

7. Shanghai Institute of Micro-system and Information Technology

8. Chinese Academy of Science

9. Shanghai 200050

Abstract

The scaling effects of the Ge₈Sb₉₂ thin films on the phase change behavior, thermal properties, phase structure, crystallization mechanism and electrical switching characteristics of phase change memory were systematically investigated.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR09540F

Reference45 articles.

1. Interfacial phase-change memory

2. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

3. Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits

4. Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement

5. Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

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