Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing-Reference-Cited by-同舟云学术

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Published:2017-12-15 Issue:6369 Volume:358 Page:1423-1427
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Rao Feng¹²^ORCID,Ding Keyuan¹²^ORCID,Zhou Yuxing³^ORCID,Zheng Yonghui¹^ORCID,Xia Mengjiao⁴,Lv Shilong¹,Song Zhitang¹^ORCID,Feng Songlin¹^ORCID,Ronneberger Ider⁵,Mazzarello Riccardo⁵^ORCID,Zhang Wei³^ORCID,Ma Evan³⁶

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

2. College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.

3. Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.

4. International Laboratory of Quantum Functional Materials of Henan, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.

5. Institute for Theoretical Solid State Physics, JARA-FIT and JARA-HPC, RWTH Aachen University, Aachen D-52074, Germany.

6. Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, USA.

Abstract

Fast phase change with no preconditions Random access memory (RAM) devices that rely on phase changes are primarily limited by the speed of crystallization. Rao et al. combined theory with a simple set of selection criteria to isolate a scandium-doped antimony telluride (SST) with a subnanosecond crystallization speed (see the Perspective by Akola and Jones). They synthesized SST and constructed a RAM device with a 700-picosecond writing speed. This is an order of magnitude faster than previous phase-change memory devices and competitive with consumer dynamic access, static random access, and flash memory. Science , this issue p. 1423 ; see also p. 1386

Funder

U.S. Department of Energy

Deutsche Forschungsgemeinschaft

National Natural Science Foundation of China

Chinese Academy of Sciences

Science and Technology Foundation of Shenzhen

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference50 articles.

1. Towards a universal memory?