Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement-Reference-Cited by-同舟云学术

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Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement

Published:2007-11 Issue:44-46 Volume:353 Page:4043-4047
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Wu Liangcai,Song Zhitang,Liu Bo,Zhang Ting,Rao Feng,Shen Jie,Wang Feng,Feng Songlin

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. RAPID REVERSIBLE LIGHT‐INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS

2. “PD” (Powerfull Optical Disk System) for Multimedia

3. A Review of Optical Disk Systems with Blue-Violet Laser Pickups

4. S. Lai T. Lowrey in: IEEE Conference Proceedings of International Electron Devices Meeting, 2001, p. 36.5-1.

5. Reversible Electrical Switching Phenomena in Disordered Structures

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1. Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials;Advanced Functional Materials;2024-07-16

2. Modeling Reset, Set, and Read Operations in Nanoscale Ge₂Sb₂Te₅ Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties;physica status solidi (RRL) – Rapid Research Letters;2023-02-11

3. SbSe/ZnSb stacked thin films with multi-level phase transition for high density phase change memory applications;Journal of Materials Science: Materials in Electronics;2019-07-17

4. Thermal conductivity measurement of Ge2Sb2Te5 thin film using improved 3ω method;High Temperatures-High Pressures;2019

5. The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film;Coatings;2018-03-23

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