The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film
Author:
Publisher
MDPI AG
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces
Link
http://www.mdpi.com/2079-6412/8/4/117/pdf
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1. Phase-change materials for rewriteable data storage
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1. Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge1Sb2Te4;Journal of Materials Chemistry C;2022
2. Metal-insulator transition and doping-induced phase change in Ge 2 Sb 2 Se 5 x Te 5 − 5 x;Applied Physics Letters;2020-11-09
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