Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors-Reference-Cited by-同舟云学术

Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors

Published:2014 Issue:28 Volume:2 Page:5695-5703
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Bae Eun Jin¹²³,Kang Young Hun¹²³,Han Mijeong¹²³,Lee Changjin¹²³⁴⁵,Cho Song Yun¹²³

Affiliation:

1. Division of Advanced Materials

2. Korea Research Institute of Chemical Technology

3. Deajoen 305-600, Republic of Korea

4. Department of Chemical Convergence Materials

5. Korea University of Science and Technology

Abstract

We report the fabrication of high-performance metal oxide thin-film transistors (TFTs) with AlO_x gate dielectrics using combustion chemistry in a solution process to provide energy to convert oxide precursors into oxides at low temperatures.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00874J

Reference30 articles.

1. Growth, dielectric properties, and memory device applications of ZrO2 thin films

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4. High-mobility low-temperature ZnO transistors with low-voltage operation

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