Low-Energy Path to Dense HfO2 Thin Films with Aqueous Precursor-Reference-Cited by-同舟云学术

Low-Energy Path to Dense HfO2 Thin Films with Aqueous Precursor

Published:2011-01-19 Issue:4 Volume:23 Page:945-952
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Jiang Kai¹,Anderson Jeremy T.¹,Hoshino Ken²,Li Dong³,Wager John F.²,Keszler Douglas A.¹

Affiliation:

1. Department of Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, Oregon 97331-4003, United States

2. School of Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Oregon State University, Corvallis, Oregon 97331-5501, United States

3. ASM America, Inc., 3440 E. University Dr., Phoenix, Arizona 85034, United States

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm102082j

Reference54 articles.

1. Comparison of femtosecond and nanosecond laser-induced damage in HfO_2 single-layer film and HfO_2-SiO_2 high reflector

2. Sol-gel Er-doped SiO2–HfO2 planar waveguides: A viable system for 1.5 μm application

3. High dielectric constant gate oxides for metal oxide Si transistors

4. Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition

5. Diffusion of O vacancies nearSi:HfO2interfaces: Anab initioinvestigation

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