Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an 710071, China
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Key Research and Development Projects of Shaanxi Province
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0057806
Reference48 articles.
1. Enhanced Electrical Properties of Thin-Film Transistor with Self-Passivated Multistacked Active Layers
2. High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air
3. Metal oxide heterojunctions for high performance solution grown oxide thin film transistors
4. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
5. Solution Processed AlInO/In 2 O 3 Heterostructure Channel Thin Film Transistor with Enhanced Performance
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