Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors-Reference-Cited by-同舟云学术

Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

Author:

Zhu Chundan¹²³⁴⁵,Liu Ao¹²³⁴⁵,Liu Guoxia¹²³⁴⁵,Jiang Guixia¹²³⁴⁵,Meng You¹²³⁴⁵,Fortunato Elvira⁶⁷⁸⁹¹⁰^ORCID,Martins Rodrigo⁶⁷⁸⁹¹⁰,Shan Fukai¹²³⁴⁵

Affiliation:

1. College of Physics

2. Qingdao University

3. Qingdao 266071

4. China

5. College of Electronic and Information Engineering

6. Department of Materials Science/CENIMAT-I3N

7. Faculty of Sciences and Technology

8. New University of Lisbon and CEMOP-UNINOVA

9. 2829-516 Caparica

10. Portugal

Abstract

High-performance n- and p-type metal-oxide thin-film transistors are fabricated on ZrO_x high-k dielectrics via a nontoxic water-inducement method.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference47 articles.

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