Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices-Reference-Cited by-同舟云学术

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

Published:2021 Issue:39 Volume:9 Page:13755-13760
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hu Songcheng¹^ORCID,Tang Zhenhua¹²,Zhang Li¹,Yao Dijie¹^ORCID,Liu Zhigang¹^ORCID,Zeng Siming³,Guo Xiaobin¹,Jiang Yanping¹,Tang Xin-Gui¹,Ma Lin¹^ORCID,Nie Zhaogang¹^ORCID,Gao Ju⁴

Affiliation:

1. School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, China

2. Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, China

3. Experimental Teaching Center, Guangdong University of Technology, Guangzhou, 510006, China

4. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China

Abstract

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03282H

Reference52 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Memristive switching mechanism for metal/oxide/metal nanodevices

4. Advanced Data Encryption using 2D Materials

5. Who Wins the Nonvolatile Memory Race?

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