Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD
Author:
Affiliation:
1. Institute for Microelectronics and Microsystems
2. CNR-IMM Unit of Agrate Brianza
3. Agrate Brianza
4. Italy
5. University of Milano-Bicocca
6. Institute of Materials for Electronics and Magnetism
7. CNR-IMEM, Parma
8. 43100 Parma
Abstract
Highly oriented antimony telluride thin films are prepared by room temperature metalorganic chemical vapor deposition on Si(111).
Funder
H2020 Future and Emerging Technologies
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA02567D
Reference48 articles.
1. 2D transition metal dichalcogenides
2. Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications
3. Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review
4. A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators
5. Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb–Te nanowires by MOCVD
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