Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion-Reference-Cited by-同舟云学术

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb₂Te₃/Bi₂Te₃ Topological Insulator Heterostructure for Spin-Charge Conversion

Published:2023-10-20 Issue:43 Volume:15 Page:50237-50245
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Longo Emanuele¹^ORCID,Locatelli Lorenzo¹,Tsipas Polychronis²^ORCID,Lintzeris Akylas²³,Dimoulas Athanasios²^ORCID,Fanciulli Marco⁴^ORCID,Longo Massimo¹⁵^ORCID,Mantovan Roberto¹^ORCID

Affiliation:

1. CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza 20864, Italy

2. National Centre for Scientific Research “Demokritos”, Institute of Nanoscience and Nanotechnology, Agia Paraskevi 15341, Athens, Greece

3. Department of Physics, School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Athens 10682, Greece

4. Department of Material Science, University of Milano Bicocca, Via R. Cozzi 55, Milan 20125, Italy

5. Department of Chemical Science and Technologies, University of Rome Tor Vergata, Via della Ricerca Scientifica, Rome 100133, Italy

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c08830

Reference47 articles.

1. Spintronics for Energy- Efficient Computing: An Overview and Outlook

2. Topological insulator: Spintronics and quantum computations

3. New moves of the spintronics tango

4. Colloquium: Topological insulators

5. The birth of topological insulators

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