Growth of Sb2te3 Thin Films on Ge(111) Sample by Thermal Deposition: Morphological and Electronic Properties-Reference-Cited by-同舟云学术

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Growth of Sb2te3 Thin Films on Ge(111) Sample by Thermal Deposition: Morphological and Electronic Properties

Published:2024 Issue: Volume: Page:
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Author:

Minissale Marco,Salomon Eric,Iliolopulos Konstantinos,Lumeau Julien,Angot Thierry

Publisher

Elsevier BV

Reference27 articles.

1. Structural and thermoelectric properties of epitaxially grown Bi 2 Te 3 thin films and superlattices;N Peranio;Journal of Applied Physics,2006

2. A quintuple-layered binary chalcogenide Sb 2 Te 3 single crystal and its transport properties for thermoelectric applications;A Raja;ACS Omega,2022

3. Topological insulators in Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 with a single Dirac cone on the surface;H Zhang;Nature Physics,2009

4. Band structure engineering in (Bi 1-x Sb x ) 2 Te 3 ternary topological insulators;J Zhang;Nature Communications,2011

5. The birth of topological insulators;J Moore;Nature,2010

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