Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga<sub>2</sub>SSe monolayer-Reference-Cited by-同舟云学术

Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga₂SSe monolayer

Published:2022 Issue:25 Volume:24 Page:15376-15388
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Sa Baisheng¹^ORCID,Shen Xiaotian¹,Cai Shuchang¹,Cui Zhou¹,Xiong Rui¹,Xu Chao²,Wen Cuilian¹^ORCID,Wu Bo¹

Affiliation:

1. Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China

2. Xiamen Talentmats New Materials Science & Technology Co., Ltd., Xiamen 361015, P. R. China

Abstract

The Janus Ga2SSe monolayer presents high intrinsic electron mobility and outstanding properties in sub-10 nm field-effect transistors based on theoretical calculations by combining density functional theory and non-equilibrium Green's function.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP01690G

Reference65 articles.

1. Publisher Correction: Science and research policy at the end of Moore’s law