Unravelling the surface structure of β-Ga<sub>2</sub>O<sub>3</sub> (100)-Reference-Cited by-同舟云学术

Unravelling the surface structure of β-Ga₂O₃ (100)

Published:2023 Issue:40 Volume:13 Page:28042-28050
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kilian Alex Sandre¹,de Siervo Abner²^ORCID,Landers Richard²,Abreu Guilherme Jean P.³^ORCID,Castro Mayron S.²,Back Tyson⁴^ORCID,Pancotti Alexandre¹^ORCID

Affiliation:

1. Instituto de Ciências Exatas e Tecnológicas/Grupo de Física de Materiais, Universidade Federal de Jataí, BR 364, km 195, No. 3800, 75801-615, Jataí, Goias, Brazil

2. Instituto de Física “Gleb Wataghin”, Universidade Estadual de Campinas, Campinas 13083-859, SP, Brazil

3. Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, 81531-980, Curitiba-PR, Brazil

4. Air Force Research Laboratory, 2179 12th Street, B652/R122, WPAFB, Ohio 45433-7718, USA

Abstract

The present work is on a comprehensive surface atomic structure investigation of β-Ga2O3 (100).

Funder

Air Force Office of Scientific Research

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/RA/D3RA04682F

Reference38 articles.

1. High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2

2. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

3. Review of Ga2O3-based optoelectronic devices

4. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

5. The structure of low-index surfaces of β-Ga2O3

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