Optical properties of Ga2O3 thin films grown by atomic layer deposition using GaI3 and O3 as precursors-Reference-Cited by-同舟云学术

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Optical properties of Ga₂O₃ thin films grown by atomic layer deposition using GaI₃ and O₃ as precursors

Published:2024 Issue:28 Volume:12 Page:10562-10574
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Aarik Lauri¹^ORCID,Mändar Hugo¹,Kasikov Aarne¹,Tarre Aivar¹,Aarik Jaan¹

Affiliation:

1. Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia

Abstract

Absorption spectra, bandgap energies, refractive indices, and antireflection properties of atomic-layer-deposited amorphous Ga2O3, κ/ε-Ga2O3, and α-Ga2O3 films were Investigated.

Funder

Eesti Teadusagentuur

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01846J

Reference70 articles.

1. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS

2. Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga₂O₃ vertical rectifiers

3. State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

4. ε-Ga2O3: A Promising Candidate for High-Electron-Mobility Transistors

5. Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems

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