Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects-Reference-Cited by-同舟云学术

Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

Published:2019 Issue:52 Volume:9 Page:30565-30569
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Hou Pengfei¹²³⁴⁵^ORCID,Xing Siwei¹²³⁴⁵,Liu Xin¹²³⁴⁵,Chen Cheng¹²³⁴⁵,Zhong Xiangli¹²³⁴⁵^ORCID,Wang Jinbin¹²³⁴⁵,Ouyang Xiaoping¹²³⁴⁵

Affiliation:

1. Key Laboratory of Low-dimensional Materials and Application Technology

2. School of Materials Science and Engineering

3. Xiangtan University

4. Xiangtan 411105

5. China

Abstract

A planar device based on an α-In₂Se₃ nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO₂ contribute to the resistive switching behavior of the device.

Funder

Xiangtan University

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Ministry of Education of the People's Republic of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA06566K

Reference21 articles.

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