Memory Devices and Artificial Synapses with 2D Materials

Abstract

Two-dimensional (2D) materials have gained prominence as memory devices and in next generation computing platforms, such as neuromorphic computing. Semi-metallic graphene is used as electrodes in memory devices with reduced power consumption. Insulating and semiconducting 2D materials exhibit memristive behavior, thus finding use in random access memory and as analog memory for artificial synapses. The switching in memory devices with 2D materials is due to the formation of localized conductive filaments, due to the unique interface between the 2D material and the metal electrode, or by means of phase transition. Synaptic devices are realized with ferroelectric 2D materials. Charge trapping in transistors and floating gate field effect transistors is used to realize non-volatile memory. The large family of 2D materials offers a variety of options to realize memristive stacks and transistors for memory and neuromorphic computing.