Affiliation:
1. School of Materials Science and Engineering, Xiangtan University, Hunan, Xiangtan 411105, P. R. China
Abstract
Two-dimensional [Formula: see text]-In2Se3 exhibits simultaneous intercorrelated in-plane and out-of-plane polarization, making it a highly promising material for use in memories, synapses, sensors, detectors, and optoelectronic devices. With its narrow bandgap, [Formula: see text]-In2Se3 is particularly attractive for applications in photodetection. However, relatively little research has been conducted on the out-of-plane photoconductive and bulk photovoltaic effects in [Formula: see text]-In2Se3. This limits the potential of [Formula: see text]-In2Se3 in the device innovation and performance modification. Herein, we have developed an [Formula: see text]-In2Se3-based heterojunction with a transparent electrode of two-dimensional Ta2NiS5. The out-of-plane electric field can effectively separate the photo-generated electron–hole pairs in the heterojunction, resulting in an out-of-plane responsivity (R), external quantum efficiency (EQE), and specific detectivity ([Formula: see text]) of 0.78[Formula: see text]mA/W, 10[Formula: see text]% and [Formula: see text] Jones, respectively. The out-of-plane bulk photovoltaic effect has been demonstrated by changes in the short circuit current (SCC) and open circuit voltage ([Formula: see text]) with different optical power intensity and temperature, which indicates that [Formula: see text]-In2Se3-based heterojunctions has application potential in mid-far infrared light detection based on its out-of-plane photoconductive and bulk photovoltaic effects. Although the out-of-plane photoconductive and bulk photovoltaic effects are relatively lower than that of traditional materials, the findings pave the way for a better understanding of the out-of-plane characteristics of two-dimensional [Formula: see text]-In2Se3 and related heterojunctions. Furthermore, the results highlight the application potential of [Formula: see text]-In2Se3 in low-power device innovation and performance modification.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province, China
Research Foundation of Education Bureau of Hunan Province, China
Publisher
World Scientific Pub Co Pte Ltd
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials