Optimized Al-doped TiO2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate-Reference-Cited by-同舟云学术

Optimized Al-doped TiO2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

Published:2021 Issue:5 Volume:9 Page:1572-1583
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Dong Gun¹²³⁴,An Cheol Hyun¹²³⁴,Kim Sang Hyeon¹²³⁴,Kwon Dae Seon¹²³⁴,Lim Junil¹²³⁴,Jeon Woojin⁵⁶⁷⁴^ORCID,Hwang Cheol Seong¹²³⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center

2. Seoul National University

3. Seoul

4. Republic of Korea

5. Department of Advanced Materials Engineering for Information and Electronics

6. Kyung Hee University

7. Yongin 17104

Abstract

Atomic layer deposited TiO₂- and Al₂O₃-based high-k gate insulators (GIs) were examined for the Ge-based metal-oxide-semiconductor field effective transistor (MOSFET) application.

Funder

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC04725B

Reference49 articles.

1. Germanium Based Field-Effect Transistors: Challenges and Opportunities

2. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

3. Gate dielectric formation and MIS interface characterization on Ge

4. High-k/Ge MOSFETs for future nanoelectronics

5. III-V/Ge MOS device technologies for low power integrated systems

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mg-doped ZnO thin film based capacitive memory with low leakage current;Journal of Materials Science: Materials in Electronics;2024-07

2. The impact of sputtering pressure on the TiO2/p-Si interface and its implications for hole-blocking and photodetection;Journal of Alloys and Compounds;2024-06

3. Reduced Work Function in Anatase ⟨101⟩ TiO₂ Films Self-Doped by O-Vacancy-Dependent Ti³⁺ Bonds Controlling the Photocatalytic Dye Degradation Performance;Langmuir;2024-05-07

4. High-temperature and interfacial oxidation of MAX phase-reinforced composite coatings deposited by laser cladding on Zr alloy substrates;Ceramics International;2023-12

5. Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO ₂ Ferroelectric Film;Advanced Electronic Materials;2022-06-23