Optimized Al-doped TiO2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

Author:

Kim Dong Gun1234,An Cheol Hyun1234,Kim Sang Hyeon1234,Kwon Dae Seon1234,Lim Junil1234,Jeon Woojin5674ORCID,Hwang Cheol Seong1234ORCID

Affiliation:

1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center

2. Seoul National University

3. Seoul

4. Republic of Korea

5. Department of Advanced Materials Engineering for Information and Electronics

6. Kyung Hee University

7. Yongin 17104

Abstract

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulators (GIs) were examined for the Ge-based metal-oxide-semiconductor field effective transistor (MOSFET) application.

Funder

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3