MoS2-capped CuxS nanocrystals: a new heterostructured geometry of transition metal dichalcogenides for broadband optoelectronics-Reference-Cited by-同舟云学术

MoS2-capped CuxS nanocrystals: a new heterostructured geometry of transition metal dichalcogenides for broadband optoelectronics

Published:2019 Issue:3 Volume:6 Page:587-594
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Li Yuan¹²³⁴⁵^ORCID,Murthy Akshay A.⁶⁷⁸⁹¹⁰,DiStefano Jennifer G.⁶⁷⁸⁹,Jung Hee Joon⁶⁷⁸⁹¹¹^ORCID,Hao Shiqiang⁶⁷⁸⁹,Villa Cesar J.⁶⁷⁸⁹,Wolverton Chris⁶⁷⁸⁹,Chen Xinqi¹¹⁷⁸⁹¹²,Dravid Vinayak P.⁶⁷⁸⁹¹¹^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. Center of Advanced Lubrication and Seal Materials

3. Northwestern Polytechnical University

4. Xi'an

5. China

6. Department of Materials Science and Engineering

7. Northwestern University

8. Evanston

9. USA

10. International Institute for Nanotechnology (IIN), Northwestern University

11. Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center

12. Department of Mechanical Engineering

Abstract

Heterostructuring of different transition metal dichalcogenides (TMDs) leads to interesting band alignment and performance improvement, and thus enables new routes for the development of materials for next-generation semiconductor electronics.

Funder

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/MH/C8MH00809D

Reference41 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Two-dimensional semiconductors for transistors

3. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials