Flash memory based on solution processed hafnium dioxide charge trapping layer
Author:
Affiliation:
1. Department of Physics and Materials Science
2. City University of Hong Kong
3. Hong Kong SAR
4. Shenzhen Research Institute
Abstract
Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00010B
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1. Transparent and Flexible Graphene Charge-Trap Memory
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4. Azobenzene-Functionalized Gold Nanoparticles as Hybrid Double-Floating-Gate in Pentacene Thin-Film Transistors/Memories with Enhanced Response, Retention, and Memory Windows
5. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism
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